SI4430BDY-T1-GE3 - Vishay Siliconix

Part Number	SI4430BDY-T1-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 20A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

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