SI4190DY-T1-GE3 Detailed Description
| Part Number |
SI4190DY-T1-GE3 |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 50V |
| Vgs (Max) |
±20V |
| FET Feature |
- |
| Power Dissipation (Max) |
3.5W (Ta), 7.8W (Tc) |
| Rds On (Max) @ Id, Vgs |
8.8 mOhm @ 15A, 10V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
8-SO |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Weight |
- |
| Country of Origin |
- |
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