SI4062DY-T1-GE3 - Vishay Siliconix

Part Number	SI4062DY-T1-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	32.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3175pF @ 30V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	7.8W (Tc)
Rds On (Max) @ Id, Vgs	4.2 mOhm @ 20A, 10V
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI4060-B0B-FM	Silicon Labs	TRANSMITTER RF EZRADIO PRO 20QFN	Details
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SI4060-C2A-GM	Silicon Labs	EZ RADIO PRO SUB GHZ TRANSMITTER	Details
SI4060-C2A-GMR	Silicon Labs	TRANSMITTER RF EZRADIO PRO 20QFN	Details
SI4062DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 32.1A 8-SO	Details
SI4063-B0B-FM	Silicon Labs	TRANSMITTER RF EZRADIO PRO 20QFN	Details
SI4063-B1B-FM	Silicon Labs	TRANSMITTER RF EZRADIO PRO 20QFN	Details
SI4063-B1B-FMR	Silicon Labs	TRANSMITTER RF EZRADIO PRO 20QFN	Details
SI4063-C2A-GM	Silicon Labs	TRANSMITTER RF EZRADIO PRO 20QFN	Details