SI3440DV-T1-GE3

SI3440DV-T1-GE3 - Vishay Siliconix

Part Number
SI3440DV-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 150V 1.2A 6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI3440DV-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
7500 pcs
Reference Price
USD 0.5529/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SI3440DV-T1-GE3

SI3440DV-T1-GE3 Detailed Description

Part Number SI3440DV-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.14W (Ta)
Rds On (Max) @ Id, Vgs 375 mOhm @ 1.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Weight -
Country of Origin -

RELATED PRODUCTS FOR SI3440DV-T1-GE3