SI2342DS-T1-GE3 Detailed Description
Part Number |
SI2342DS-T1-GE3 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
8V |
Current - Continuous Drain (Id) @ 25°C |
6A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
1.2V, 4.5V |
Vgs(th) (Max) @ Id |
800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
15.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
1070pF @ 4V |
Vgs (Max) |
±5V |
FET Feature |
- |
Power Dissipation (Max) |
1.3W (Ta), 2.5W (Tc) |
Rds On (Max) @ Id, Vgs |
17 mOhm @ 7.2A, 4.5V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Weight |
- |
Country of Origin |
- |
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