SI2337DS-T1-GE3 Detailed Description
Part Number |
SI2337DS-T1-GE3 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
80V |
Current - Continuous Drain (Id) @ 25°C |
2.2A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
6V, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
500pF @ 40V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
760mW (Ta), 2.5W (Tc) |
Rds On (Max) @ Id, Vgs |
270 mOhm @ 1.2A, 10V |
Operating Temperature |
-50°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23-3 (TO-236) |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Weight |
- |
Country of Origin |
- |
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