| Part Number | SI2307CDS-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 1.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 88 mOhm @ 3.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SI2307 | HJX | SI2307 HJX SOT-23 New Original Stocks | Details |
|
SI2307-TP | Micro Commercial Co | P-CHANNEL MOSFET, SOT-23 PACKAGE | Details |
|
Si2307BDS | VISHAY | P-Channel 30-V (D-S) MOSFET | Details |
|
SI2307BDS-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 2.5A SOT23-3 | Details |
|
SI2307BDS-T1-E3. | V | SI2307BDS-T1-E3. V SOT-23 New Original Stocks | Details |
|
SI2307BDS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 2.5A SOT23-3 | Details |
|
SI2307CDS | VIS | SI2307CDS VIS SOT-23 New Original Stocks | Details |
|
SI2307CDS-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 3.5A SOT23-3 | Details |
|
SI2307CDS-T1-E3. | V | SI2307CDS-T1-E3. V SOT-23 New Original Stocks | Details |
|
SI2307CDS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 3.5A SOT23-3 | Details |
