SI2306BDS-T1-GE3

SI2306BDS-T1-GE3 - Vishay Siliconix

Part Number
SI2306BDS-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 30V 3.16A SOT23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI2306BDS-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
15000 pcs
Reference Price
USD 0.2217/pcs
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SI2306BDS-T1-GE3 Detailed Description

Part Number SI2306BDS-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.16A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 305pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Rds On (Max) @ Id, Vgs 47 mOhm @ 3.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Weight -
Country of Origin -

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