SI1417EDH-T1-GE3

SI1417EDH-T1-GE3 - Vishay Siliconix

Part Number
SI1417EDH-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 12V 2.7A SC-70-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI1417EDH-T1-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4140 pcs
Reference Price
USD 0/pcs
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SI1417EDH-T1-GE3 Detailed Description

Part Number SI1417EDH-T1-GE3
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 85 mOhm @ 3.3A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6 (SOT-363)
Package / Case 6-TSSOP, SC-88, SOT-363
Weight -
Country of Origin -

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