SI1411DH-T1-E3 Detailed Description
Part Number |
SI1411DH-T1-E3 |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
150V |
Current - Continuous Drain (Id) @ 25°C |
420mA (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
6.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
1W (Ta) |
Rds On (Max) @ Id, Vgs |
2.6 Ohm @ 500mA, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SC-70-6 (SOT-363) |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR SI1411DH-T1-E3