IRFBG30PBF

IRFBG30PBF - Vishay Siliconix

Part Number
IRFBG30PBF
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 1000V 3.1A TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRFBG30PBF PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
7525 pcs
Reference Price
USD 1.9/pcs
Our Price
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IRFBG30PBF Detailed Description

Part Number IRFBG30PBF
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 5 Ohm @ 1.9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Weight -
Country of Origin -

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