IRFB11N50A

IRFB11N50A - Vishay Siliconix

Part Number
IRFB11N50A
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 500V 11A TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRFB11N50A PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3858 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for IRFB11N50A

IRFB11N50A Detailed Description

Part Number IRFB11N50A
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1423pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Rds On (Max) @ Id, Vgs 520 mOhm @ 6.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR IRFB11N50A