| Part Number | BAV100-GS08 |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 250mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 100nA @ 200V |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AC, MINI-MELF, SOD-80 |
| Supplier Device Package | SOD-80 MiniMELF |
| Operating Temperature - Junction | 175°C (Max) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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BAV10 | SYNSEMI | HIGH SPEED SWITCHING DIODE | Details |
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BAV100 | VISHAY | Silicon Epitaxial Planar Diodes | Details |
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BAV100-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | Details |
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BAV100-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | Details |
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BAV100_07 | SEMIKRON | Ultrafast silicon rectifier diodes | Details |
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BAV101 | PHIL | BAV101 PHIL SOP New Original Stocks | Details |
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BAV101 L0G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | Details |
|
BAV101 L1G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | Details |
|
BAV101-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | Details |
|
BAV101-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | Details |
