BAV100-GS08 - Vishay Semiconductor Diodes Division

Part Number	BAV100-GS08
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	50V
Current - Average Rectified (Io)	250mA (DC)
Voltage - Forward (Vf) (Max) @ If	1V @ 100mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	50ns
Current - Reverse Leakage @ Vr	100nA @ 200V
Capacitance @ Vr, F	1.5pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-213AC, MINI-MELF, SOD-80
Supplier Device Package	SOD-80 MiniMELF
Operating Temperature - Junction	175°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BAV10	SYNSEMI	HIGH SPEED SWITCHING DIODE	Details
BAV100	VISHAY	Silicon Epitaxial Planar Diodes	Details
BAV100-GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 250MA SOD80	Details
BAV100-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 250MA SOD80	Details
BAV100_07	SEMIKRON	Ultrafast silicon rectifier diodes	Details
BAV101	PHIL	BAV101 PHIL SOP New Original Stocks	Details
BAV101 L0G	Taiwan Semiconductor Corporation	DIODE GP 250V 200MA MINIMELF	Details
BAV101 L1G	Taiwan Semiconductor Corporation	DIODE GP 250V 200MA MINIMELF	Details
BAV101-GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD80	Details
BAV101-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD80	Details