3N163-2 Detailed Description
Part Number |
3N163-2 |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40V |
Current - Continuous Drain (Id) @ 25°C |
50mA (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
20V |
Vgs(th) (Max) @ Id |
5V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
3.5pF @ 15V |
Vgs (Max) |
±30V |
FET Feature |
- |
Power Dissipation (Max) |
375mW (Ta) |
Rds On (Max) @ Id, Vgs |
250 Ohm @ 100µA, 20V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-72 |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Weight |
- |
Country of Origin |
- |
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