TPN5900CNH,L1Q - Toshiba Semiconductor and Storage

Part Number	TPN5900CNH,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 75V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs	59 mOhm @ 4.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-