TPH12008NH,L1Q

TPH12008NH,L1Q - Toshiba Semiconductor and Storage

Part Number
TPH12008NH,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N CH 80V 24A SOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPH12008NH,L1Q PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
48889 pcs
Reference Price
USD 0.5559/pcs
Our Price
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TPH12008NH,L1Q Detailed Description

Part Number TPH12008NH,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs 12.3 mOhm @ 12A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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