TPC8018-H(TE12LQM)

TPC8018-H(TE12LQM) - Toshiba Semiconductor and Storage

Part Number
TPC8018-H(TE12LQM)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 30V 18A SOP8 2-6J1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPC8018-H(TE12LQM) PDF online browsing
Datasheet PDF Download
TPC8018-H(TE12LQM).pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3583 pcs
Reference Price
USD 0/pcs
Our Price
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TPC8018-H(TE12LQM) Detailed Description

Part Number TPC8018-H(TE12LQM)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2265pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 9A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP (5.5x6.0)
Package / Case 8-SOIC (0.173", 4.40mm Width)
Weight -
Country of Origin -

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