TPC6113(TE85L,F,M) - Toshiba Semiconductor and Storage

Part Number	TPC6113(TE85L,F,M)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	690pF @ 10V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Rds On (Max) @ Id, Vgs	55 mOhm @ 2.5A, 4.5V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-6 (2.9x2.8)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPC6110	TOS	TPC6110 TOS VS-6(2.. New Original Stocks	Details
TPC6110(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 4.5A VS6	Details
TPC6111	TOSHIBA	TPC6111 TOSHIBA SOT-16.. New Original Stocks	Details
TPC6111(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5.5A VS-6	Details
TPC6113(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5A VS6	Details