TK560A65Y,S4X

TK560A65Y,S4X - Toshiba Semiconductor and Storage

Part Number
TK560A65Y,S4X
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET TRANSISTOR TO-220SIS PD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK560A65Y,S4X PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
500 pcs
Reference Price
USD 1.54/pcs
Our Price
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TK560A65Y,S4X Detailed Description

Part Number TK560A65Y,S4X
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 30W
Rds On (Max) @ Id, Vgs 560 mOhm @ 3.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Weight -
Country of Origin -

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