TK4R3E06PL,S1X - Toshiba Semiconductor and Storage

Part Number	TK4R3E06PL,S1X
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	80A
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	48.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3280pF @ 30V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	87W (Tc)
Rds On (Max) @ Id, Vgs	7.2 mOhm @ 15A, 4.5V
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TK4R3A06PL,S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	Details
	TK4R3E06PL,S1X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	Details