TK3A65DA(STA4,QM) - Toshiba Semiconductor and Storage

Part Number	TK3A65DA(STA4,QM)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Rds On (Max) @ Id, Vgs	2.51 Ohm @ 1.3A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TK3A65D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 3A TO-220SIS	Details
	TK3A65DA(STA4,QM)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 2.5A TO-220SIS	Details