TK31V60W5,LVQ

TK31V60W5,LVQ - Toshiba Semiconductor and Storage

Part Number
TK31V60W5,LVQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N -CH 600V 30.8A DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK31V60W5,LVQ PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
6250 pcs
Reference Price
USD 2.0555/pcs
Our Price
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TK31V60W5,LVQ Detailed Description

Part Number TK31V60W5,LVQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 240W (Tc)
Rds On (Max) @ Id, Vgs 109 mOhm @ 15.4A, 10V
Operating Temperature 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad
Weight -
Country of Origin -

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