TK31N60W,S1VF - Toshiba Semiconductor and Storage

Part Number	TK31N60W,S1VF
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 300V
Vgs (Max)	±30V
FET Feature	Super Junction
Power Dissipation (Max)	230W (Tc)
Rds On (Max) @ Id, Vgs	88 mOhm @ 15.4A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TK31N60W,S1VF	Toshiba Semiconductor and Storage	MOSFET N CH 600V 30.8A TO247	Details
TK31N60W5,S1VF	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-247	Details
TK31N60X,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-247	Details