TK22E10N1,S1X - Toshiba Semiconductor and Storage

Part Number	TK22E10N1,S1X
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	72W (Tc)
Rds On (Max) @ Id, Vgs	13.8 mOhm @ 11A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Weight	-
Country of Origin	-