TK10Q60W,S1VQ

TK10Q60W,S1VQ - Toshiba Semiconductor and Storage

Part Number
TK10Q60W,S1VQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 600V 9.7A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK10Q60W,S1VQ PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
25 pcs
Reference Price
USD 3.04/pcs
Our Price
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TK10Q60W,S1VQ Detailed Description

Part Number TK10Q60W,S1VQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Rds On (Max) @ Id, Vgs 430 mOhm @ 4.9A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Stub Leads, IPak
Weight -
Country of Origin -

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