TJ15S06M3L(T6L1,NQ - Toshiba Semiconductor and Storage

Part Number	TJ15S06M3L(T6L1,NQ
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1770pF @ 10V
Vgs (Max)	+10V, -20V
FET Feature	-
Power Dissipation (Max)	41W (Tc)
Rds On (Max) @ Id, Vgs	50 mOhm @ 7.5A, 10V
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK+
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-