SSM5N15FE(TE85L,F) - Toshiba Semiconductor and Storage

Part Number	SSM5N15FE(TE85L,F)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4V
Vgs(th) (Max) @ Id	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	7.8pF @ 3V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Rds On (Max) @ Id, Vgs	4 Ohm @ 10mA, 4V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ESV
Package / Case	SOT-553
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SSM5N15FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 100MA ESV	Details
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SSM5N15FU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.1A USV	Details
SSM5N16FU	TOSHIBA	SSM5N16FU TOSHIBA SOT353 New Original Stocks	Details
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