RN2969(TE85L,F) - Toshiba Semiconductor and Storage

Part Number	RN2969(TE85L,F)
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	47k
Resistor - Emitter Base (R2) (Ohms)	22k
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	200mW
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	US6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RN2961(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2961FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details
RN2962(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2962FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details
RN2963(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2963FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details
RN2964(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W US6	Details
RN2964FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details
RN2965(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6	Details
RN2965FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6	Details