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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased › RN2107MFV,L3F
RN2107MFV,L3F

RN2107MFV,L3F - Toshiba Semiconductor and Storage

Part Number
RN2107MFV,L3F
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PREBIAS NPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RN2107MFV,L3F PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
913275 pcs
Reference Price
USD 0.029/pcs
Our Price
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RN2107MFV,L3F Detailed Description

Part Number RN2107MFV,L3F
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 150mW
Mounting Type -
Package / Case -
Supplier Device Package -
Weight -
Country of Origin -

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