RN1112CT(TPL3)

RN1112CT(TPL3) - Toshiba Semiconductor and Storage

Part Number
RN1112CT(TPL3)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PREBIAS NPN 0.05W CST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RN1112CT(TPL3) PDF online browsing
Datasheet PDF Download
RN1112CT(TPL3).pdf
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
4103 pcs
Reference Price
USD 0/pcs
Our Price
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RN1112CT(TPL3) Detailed Description

Part Number RN1112CT(TPL3)
Part Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 20V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) -
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition -
Power - Max 50mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package CST3
Weight -
Country of Origin -

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