• English
      Language Translation
    • English
    • Deutschl
    • Italia
    • France
    • España
    • 대한민국
    • 日本语
    • русский
Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - RF › MT3S20TU(TE85L)
MT3S20TU(TE85L)

MT3S20TU(TE85L) - Toshiba Semiconductor and Storage

Part Number
MT3S20TU(TE85L)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS RF NPN 7GHZ 80MA UFM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
MT3S20TU(TE85L) PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
4075 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for MT3S20TU(TE85L)

MT3S20TU(TE85L) Detailed Description

Part Number MT3S20TU(TE85L)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.45dB @ 20mA, 5V
Gain 12dB
Power - Max 900mW
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
Current - Collector (Ic) (Max) 80mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Leads
Supplier Device Package UFM
Weight -
Country of Origin -

RELATED PRODUCTS FOR MT3S20TU(TE85L)

Image Part Number Manufacturers Description View
MT3S20P(TE12L,F) MT3S20P(TE12L,F) Toshiba Semiconductor and Storage TRANS RF NPN 12V 1GHZ PW-MINI Details
MT3S20TU(TE85L) MT3S20TU(TE85L) Toshiba Semiconductor and Storage TRANS RF NPN 7GHZ 80MA UFM Details