CUHS20F40,H3F - Toshiba Semiconductor and Storage

Part Number	CUHS20F40,H3F
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	40V
Current - Average Rectified (Io)	2A
Voltage - Forward (Vf) (Max) @ If	540mV @ 2A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	60µA @ 40V
Capacitance @ Vr, F	300pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	2-SMD, Flat Lead
Supplier Device Package	US2H
Operating Temperature - Junction	150°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CUHS20F30,H3F	Toshiba Semiconductor and Storage	SCHOTTKY BARRIER DIODE 30V/2A	Details
CUHS20F40,H3F	Toshiba Semiconductor and Storage	SCHOTTKY BARRIER DIODE 40V/2A	Details
CUHS20S30,H3F	Toshiba Semiconductor and Storage	SCHOTTKY BARRIER DIODE LOW VF	Details
CUHS20S40,H3F	Toshiba Semiconductor and Storage	SCHOTTKY BARRIER DIODE LOW VF	Details