2SK1119(F)

2SK1119(F) - Toshiba Semiconductor and Storage

Part Number
2SK1119(F)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 1000V 4A TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SK1119(F) PDF online browsing
Datasheet PDF Download
2SK1119(F).pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4236 pcs
Reference Price
USD 0/pcs
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2SK1119(F) Detailed Description

Part Number 2SK1119(F)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Rds On (Max) @ Id, Vgs 3.8 Ohm @ 2A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Weight -
Country of Origin -

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