2SJ360(F) - Toshiba Semiconductor and Storage

Part Number	2SJ360(F)
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	155pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	730 mOhm @ 500mA, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PW-MINI
Package / Case	TO-243AA
Weight	-
Country of Origin	-

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