2SD2695(T6CNO,A,F) - Toshiba Semiconductor and Storage

Part Number	2SD2695(T6CNO,A,F)
Part Status	Last Time Buy
Transistor Type	NPN
Current - Collector (Ic) (Max)	2A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 2V
Power - Max	900mW
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92MOD
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
2SD2695(T6CANO,A,F	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	Details
2SD2695(T6CANO,F,M	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	Details
2SD2695(T6CNO,A,F)	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	Details
2SD2695,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	Details
2SD2695,T6F(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3	Details
2SD2696	ROHM	Low frequency transistor (for amplification)	Details
2SD2696T2L	Rohm Semiconductor	TRANS NPN 30V 0.4A VMT3	Details
2SD2696_09	ROHM	Low frequency transistor (for amplification)	Details