2SD2406-Y(F)

2SD2406-Y(F) - Toshiba Semiconductor and Storage

Part Number
2SD2406-Y(F)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS NPN 80V 4A TO220NIS
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SD2406-Y(F) PDF online browsing
Datasheet PDF Download
2SD2406-Y(F).pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3964 pcs
Reference Price
USD 0/pcs
Our Price
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2SD2406-Y(F) Detailed Description

Part Number 2SD2406-Y(F)
Part Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max) 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V
Power - Max 25W
Frequency - Transition 8MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
Weight -
Country of Origin -

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