2SD2406-Y(F) - Toshiba Semiconductor and Storage

Artikelnummer	2SD2406-Y(F)
Teilstatus	Obsolete
Transistor-Typ	NPN
Aktuell - Sammler (Ic) (Max)	4A
Spannung - Kollektor-Emitter-Durchbruch (max.)	80V
Vce Sättigung (Max) @ Ib, Ic	1.5V @ 300mA, 3A
Aktuell - Kollektor Cutoff (Max)	30µA (ICBO)
Gleichstromverstärkung (hFE) (Min) @ Ic, Vce	120 @ 500mA, 5V
Leistung max	25W
Frequenz - Übergang	8MHz
Betriebstemperatur	150°C (TJ)
Befestigungsart	Through Hole
Paket / Fall	TO-220-3 Full Pack
Lieferantengerätepaket	TO-220NIS
Gewicht	-
Ursprungsland	-

Artikelnummer	Hersteller	Beschreibung	Aussicht
2SD20000P	Panasonic Electronic Components	TRANS NPN 60V 4A TO-220F	Einzelheiten
2SD2004	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Einzelheiten
2SD2005	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Einzelheiten
2SD2006	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Einzelheiten
2SD2007	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Einzelheiten
2SD2008	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Einzelheiten
2SD2009	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Einzelheiten
2SD2010	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Einzelheiten
2SD2011	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Einzelheiten
2SD2012	STMicroelectronics	TRANS NPN 60V 3A TO-220F	Einzelheiten