2SC5084-O(TE85L,F) - Toshiba Semiconductor and Storage

Part Number	2SC5084-O(TE85L,F)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
2SC5080	RENESAS	2SC5080 RENESAS SOT143 New Original Stocks	Details
2SC5080ZD	HITACHI	2SC5080ZD HITACHI SOT-14.. New Original Stocks	Details
2SC5081	RENESAS	2SC5081 RENESAS SOT343 New Original Stocks	Details
2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA SMINI	Details
2SC5084-Y	TOSHIBA	2SC5084-Y TOSHIBA SOT23 New Original Stocks	Details
2SC5084YTE85LF	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM S-MINI	Details
2SC5085	TOSHIBA	2SC5085 TOSHIBA SOT-32.. New Original Stocks	Details
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ USM	Details
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM USM	Details
2SC5086-O,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SSM	Details