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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single › 2SC1627A-Y,PASF(M
2SC1627A-Y,PASF(M

2SC1627A-Y,PASF(M - Toshiba Semiconductor and Storage

Part Number
2SC1627A-Y,PASF(M
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS NPN 400MA 80V TO226-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SC1627A-Y,PASF(M PDF online browsing
Datasheet PDF Download
2SC1627A-Y,PASF(M.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4005 pcs
Reference Price
USD 0/pcs
Our Price
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2SC1627A-Y,PASF(M Detailed Description

Part Number 2SC1627A-Y,PASF(M
Part Status Last Time Buy
Transistor Type NPN
Current - Collector (Ic) (Max) 400mA
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 2V
Power - Max 800mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Weight -
Country of Origin -

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