2SB906-Y(TE16L1,NQ

2SB906-Y(TE16L1,NQ - Toshiba Semiconductor and Storage

Part Number
2SB906-Y(TE16L1,NQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PNP 60V 3A PW-MOLD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SB906-Y(TE16L1,NQ PDF online browsing
Datasheet PDF Download
2SB906-Y(TE16L1,NQ.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
5000 pcs
Reference Price
USD 0.4572/pcs
Our Price
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2SB906-Y(TE16L1,NQ Detailed Description

Part Number 2SB906-Y(TE16L1,NQ
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 9MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PW-MOLD
Weight -
Country of Origin -

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