2SA1955FVBTPL3Z

2SA1955FVBTPL3Z - Toshiba Semiconductor and Storage

Part Number
2SA1955FVBTPL3Z
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PNP 12V 0.4A VESM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SA1955FVBTPL3Z PDF online browsing
Datasheet PDF Download
2SA1955FVBTPL3Z.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
20000 pcs
Reference Price
USD 0.0737/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for 2SA1955FVBTPL3Z

2SA1955FVBTPL3Z Detailed Description

Part Number 2SA1955FVBTPL3Z
Part Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 400mA
Voltage - Collector Emitter Breakdown (Max) 12V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V
Power - Max 100mW
Frequency - Transition 130MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Weight -
Country of Origin -

RELATED PRODUCTS FOR 2SA1955FVBTPL3Z