TS2DDR2811ZXYR Detailed Description
| Part Number |
TS2DDR2811ZXYR |
| Part Status |
Active |
| Switch Circuit |
SPST - NO |
| Multiplexer/Demultiplexer Circuit |
1:1 |
| Number of Circuits |
8 |
| On-State Resistance (Max) |
6 Ohm |
| Channel-to-Channel Matching (ΔRon) |
400 mOhm |
| Voltage - Supply, Single (V+) |
3 V ~ 3.6 V |
| Voltage - Supply, Dual (V±) |
- |
| Switch Time (Ton, Toff) (Max) |
- |
| -3db Bandwidth |
1.1GHz |
| Charge Injection |
- |
| Channel Capacitance (CS(off), CD(off)) |
2.5pF |
| Current - Leakage (IS(off)) (Max) |
- |
| Crosstalk |
-37dB @ 200MHz |
| Operating Temperature |
-40°C ~ 85°C (TA) |
| Package / Case |
20-UFBGA |
| Supplier Device Package |
20-BGA Microstar Junior (2.5x3.0) |
| Weight |
- |
| Country of Origin |
- |
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