CSD19538Q2T

CSD19538Q2T - Texas Instruments

Part Number
CSD19538Q2T
Manufacturer
Texas Instruments
Brief Description
MOSFET NCH 100V 13.1A 6WSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
CSD19538Q2T PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3750 pcs
Reference Price
USD 0.506/pcs
Our Price
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CSD19538Q2T Detailed Description

Part Number CSD19538Q2T
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 454pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
Rds On (Max) @ Id, Vgs 59 mOhm @ 5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad
Weight -
Country of Origin -

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