CSD19538Q2T Detailed Description
Part Number |
CSD19538Q2T |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
13.1A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
6V, 10V |
Vgs(th) (Max) @ Id |
3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
5.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
454pF @ 50V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta), 20.2W (Tc) |
Rds On (Max) @ Id, Vgs |
59 mOhm @ 5A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-WSON (2x2) |
Package / Case |
6-WDFN Exposed Pad |
Weight |
- |
Country of Origin |
- |
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