TSM120N10PQ56 RLG

TSM120N10PQ56 RLG - Taiwan Semiconductor Corporation

Part Number
TSM120N10PQ56 RLG
Manufacturer
Taiwan Semiconductor Corporation
Brief Description
MOSFET N-CH 100V 58A 8PDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TSM120N10PQ56 RLG PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
18327 pcs
Reference Price
USD 0/pcs
Our Price
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TSM120N10PQ56 RLG Detailed Description

Part Number TSM120N10PQ56 RLG
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3902pF @ 30V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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