TSM085N03PQ33 RGG - Taiwan Semiconductor Corporation

Part Number	TSM085N03PQ33 RGG
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	817pF @ 15V
FET Feature	-
Power Dissipation (Max)	37W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (3x3)
Package / Case	8-PowerWDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TSM085N03PQ33 RGG	Taiwan Semiconductor Corporation	MOSFET N-CH 30V 52A 8PDFN	Details
TSM085P03CS RLG	Taiwan Semiconductor Corporation	MOSFET P-CHANNEL 30V 34A 8SOP	Details
TSM085P03CV RGG	Taiwan Semiconductor Corporation	MOSFET P-CH 30V 64A 8PDFN	Details