TSM080N03EPQ56 RLG - Taiwan Semiconductor Corporation

Part Number	TSM080N03EPQ56 RLG
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 25V
FET Feature	-
Power Dissipation (Max)	54W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (5x6)
Package / Case	8-PowerTDFN
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TSM080N03EPQ56 RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 30V 55A 8PDFN	Details
	TSM080N03PQ56 RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 30V 73A 8PDFN	Details