S1J-KR3G - Taiwan Semiconductor Corporation

Part Number	S1J-KR3G
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.5µs
Current - Reverse Leakage @ Vr	1µA @ 600V
Capacitance @ Vr, F	12pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Supplier Device Package	DO-214AC (SMA)
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
S1J	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 1A SMA	Details
S1J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Details
S1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Details
S1J-13	Diodes Incorporated	DIODE GEN PURP 600V 1A SMA	Details
S1J-13-F	Diodes Incorporated	DIODE GEN PURP 600V 1A SMA	Details
S1J-B/SS	ORIGINAL	S1J-B/SS ORIGINAL DO214A.. New Original Stocks	Details
S1J-E3/11T	VISHAY	S1J-E3/11T VISHAY DO214A New Original Stocks	Details
S1J-E3/51T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details
S1J-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details
S1J-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details