MBR6050PT C0G - Taiwan Semiconductor Corporation

Part Number	MBR6050PT C0G
Part Status	Active
Diode Configuration	1 Pair Common Cathode
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	50V
Current - Average Rectified (Io) (per Diode)	60A
Voltage - Forward (Vf) (Max) @ If	930mV @ 60A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	1mA @ 50V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (TO-3P)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MBR600100CT	GeneSiC Semiconductor	DIODE MODULE 100V 300A 2TOWER	Details
MBR600100CTR	GeneSiC Semiconductor	DIODE MODULE 100V 300A 2TOWER	Details
MBR600150CT	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 300A 2 TOWER	Details
MBR600150CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 300A 2 TOWER	Details
MBR600200CT	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 300A 2 TOWER	Details
MBR600200CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 300A 2 TOWER	Details
MBR60020CT	GeneSiC Semiconductor	DIODE MODULE 20V 300A 2TOWER	Details
MBR60020CTL	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 300A 2 TOWER	Details
MBR60020CTR	GeneSiC Semiconductor	DIODE MODULE 20V 300A 2TOWER	Details
MBR60020CTRL	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 300A 2 TOWER	Details