STQ1HNK60R-AP - STMicroelectronics

Part Number	STQ1HNK60R-AP
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	400mA (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	156pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Rds On (Max) @ Id, Vgs	8.5 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
STQ1HN60K3-AP	STMicroelectronics	MOSFET N-CH 600V 0.4A TO-92	Details
STQ1HNK60	ST	STQ1HNK60 ST TO-92 New Original Stocks	Details
STQ1HNK60R-AP	STMicroelectronics	MOSFET N-CH 600V 400MA TO-92	Details