RUC002N05T116 - Rohm Semiconductor

Part Number	RUC002N05T116
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.2V, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Rds On (Max) @ Id, Vgs	2.2 Ohm @ 200mA, 4.5V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SST3
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RUC002N05	ROHM	RUC002N05 ROHM SOT23 New Original Stocks	Details
RUC002N05HZGT116	Rohm Semiconductor	1.2V DRIVE NCH MOSFET	Details
RUC002N05T116	Rohm Semiconductor	MOSFET N-CH 50V 0.2A SST3	Details